4H-SiC N-Channel JFET for Operation in High-Temperature Environments

作者：Lien Wei Cheng^*; Damrongplasit Nattapol; Paredes John H; Senesky Debbie G; Liu Tsu Jae K; Pisano Albert P

来源：IEEE Journal of the Electron Devices Society, 2014, 2(6): 164-167.

DOI：10.1109/JEDS.2014.2355132

• High-temperature electronics
• junction field effect transistor (JFET)
• silicon carbide (SiC)

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600 degrees C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 x 10(-3) Omega cm(2)at 600 degrees C. The on/off drain saturation current ratio and intrinsic gain at 600 degrees C are 1.53 x 10(3) and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.

• 出版日期2014-11