An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

作者：Hsu Hsiao Hsuan^*; Chang Chun Yen; Cheng Chun Hu; Chiou Shan Haw; Huang Chiung Hui; Chiu Yu Chien

来源：IEEE Transactions on Nanotechnology, 2014, 13(5): 933-938.

DOI：10.1109/TNANO.2014.2332395

• Gettering
• InGaZnO (IGZO)
• thin-film transistor (TFT)
• titanium oxide (TiOx)

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of %26lt;3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

• 出版日期2014-9