Fabrication and electrical properties of a (Pb, La)(Zr, Ti)O-3 capacitor with pulsed laser deposited Sn-doped In2O3 bottom electrode on Al2O3(0001)

作者：Takada Yoko; Tamano Rika; Okamoto Naoki; Saito Takeyasu^*; Yoshimura Takeshi; Fujimura Norifumi; Higuchi Koji; Kitajima Akira

来源：Japanese Journal of Applied Physics, 2017, 56(7): 07KC02.

DOI：10.7567/JJAP.56.07KC02

A Sn-doped In2O3 (ITO) electrode was deposited on Al2O3(0001) using pulsed laser deposition at different oxygen pressures to create the bottom electrode of a (Pb, La)(Zr, Ti)O-3 (PLZT) capacitor. The crystallographic orientation of the ITO films was controlled via the oxygen pressure. At 600 degrees C the (111) peak became dominant when the O-2 pressure was increased, and when the pressure reached 2.0 Pa the ITO films became preferentially (111) oriented. The remnant polarization was 58.8-90.7 and 46.0-47.5 mu C/cm(2) for the Pt/PLZT/ITO and ITO/PLZT/ITO capacitors, respectively; the ferroelectric properties of these capacitors were also determined.

• 出版日期2017-7