科研之友
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摘要
The electrical resistivity, crystalline structure, and electronic properties calculated from the experimentally measured atomic positions of the compound SmFeAsO0.81F0.19 have been studied up to pressures similar to 20 GPa. The correlation between the pressure dependence of the superconducting transition temperature (T-c) and crystallographic parameters on the same sample shows clearly that a regular FeAs4 tetrahedron maximizes T-c through optimization of carrier transfer to the FeAs planes as indicated by the evolution of the electronic band structures.
- 出版日期2011-7-11
