Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

作者：Mo Jiongjiong^*; Lind Erik; Wernersson Lars Erik

来源：IEEE Electron Device Letters, 2014, 35(5): 515-517.

DOI：10.1109/LED.2014.2308925

• InGaAs MOSFET
• source/drain engineering
• voltage gain
• oscillation frequency

We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.

• 出版日期2014-5