摘要

The dynamic electrical conduction in the bulk ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 degrees C to 440 degrees C in the frequency range 1 kHz-1 MHz. New activation energy for conduction mechanism is obtained and its frequency dependence is analyzed. The Cole Cole representation is almost half circular indicating a single contribution to total electrical conduction through the material. The activation energy for the mean relaxation process, obtained separately from the analysis of imaginary part Z" of complex impedance Z '' and from the equivalent electric circuit, is estimated to be (942 +/- 74)meV. The correlated barrier hopping model is considered to analyze the experimental data. The results are compared with those obtained previously in low temperature range.

  • 出版日期2016-11