SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

作者：Watanabe Kenta; Terashima Daiki; Nozaki Mikito; Yamada Takahiro; Nakazawa Satoshi; Ishida Masahiro; Anda Yoshiharu; Ueda Tetsuzo; Yoshigoe Akitaka; Hosoi Takuji^*; Shimura Takayoshi; Watanabe Heiji

来源：Japanese Journal of Applied Physics, 2018, 57(6): 06KA03.

DOI：10.7567/JJAP.57.06KA03

Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal-oxide-semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.

• 出版日期2018-6