Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

作者：Kurita Y; Ducournau G; Coquillat D; Satou A^*; Kobayashi K; Tombet S Boubanga; Meziani Y M; Popov V V; Knap W; Suemitsu T; Otsuji T

来源：Applied Physics Letters, 2014, 104(25): 251114.

DOI：10.1063/1.4885499

We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz(0.5) at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.

• 出版日期2014-6-23