Annealing at Different Temperatures of Silicon Microstrip Detectors After Severe Hadron Irradiation

作者：Casse Gianluigi^*; Affolder Anthony; Allport Philip P; Chmill Valery; Forshaw Dean; Greenall Ashley; Huse Torkjell; Tsurin Ilya; Wormald Michael

来源：IEEE Transactions on Nuclear Science, 2012, 59(2): 419-424.

DOI：10.1109/TNS.2012.2186316

• HL-LHC
• microstrip silicon detectors
• radiation tolerance

Two rather recent results from studies performed for preparing high resolution sensors for the future supercolliders (HL-LHC at CERN) have proven that silicon detectors read out with low noise electronics can be used for tracking minimum ionizing particles (mip) after doses up to 2 x 10(16) n(eq) cm(-2) if high bias voltage (similar to 1000 V) and adequate cooling can be routed to the sensors. These are the discovery of the charge multiplication mechanism taking place in irradiated n-in-p silicon detectors and the suppression of the reverse annealing. A discussion of this last feature and the influence of the annealing temperature is presented here.

• 出版日期2012-4