Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator

作者：Hanim A R; Menon P S^*; Shaari S; Hazura H; Mardiana B

来源：Optoelectronics and Advanced Materials-Rapid Communications, 2013, 7(3-4): 305-308.

• Phase shifter length
• SOI current injection modulator
• 3 dB bandwidth

This paper investigates the performance of a three-dimensional virtual model of a Silicon-on-Insulator (SOI) optical phase modulator using an industrial-based numerical simulator. The 3 dB bandwidth of the device was analyzed by varying the phase shifter length to 6, 12 and 18 pm. Then, the effect of varying the phase shifter length to different concentration of boron (p(+) doped well) and phosphorus (n+ doped well) was observed. It can be deduced that with appropriate applied voltage selection, the device performs the best at 6pm phase shifter length and at higher concentration of the doped wells. The.best performance of the device is at 1V, with 3 dB bandwidth of 1.4THz.

• 出版日期2013-4