Utilizing NDR effect to reduce switching threshold variations in memristive devices

作者：Alibart Fabien; Strukov Dmitri B^*

来源：Applied Physics A, 2013, 111(1): 199-202.

DOI：10.1007/s00339-013-7550-5

Variations in the switching threshold voltage of memristive devices present significant challenges for their integration into large-scale circuits. In this paper, we propose to address this problem by adding a device exhibiting S-type (N-type) negative differential resistance (NDR) in series (parallel) with memristive devices. The main effect comes from the transition between low- and high-conductivity branches of the NDR device, which leads to a redistribution of the voltage drop inside the device stack, and, as a result, the effective lowering of variations in the switching threshold. The idea is checked experimentally using a TiO2-x memristive device connected in parallel with a tunnel GaAs diode.

• 出版日期2013-4