Bistable electrical switching and nonvolatile memory effect in mixed composite of oxadiazole acceptor and carbazole donor

作者：Sun, Yanmei; Li, Lei; Wen, Dianzhong^*; bai, Xuduo

来源：Organic Electronics, 2015, 25: 283-288.

DOI：10.1016/j.orgel.2015.07.002

• PBD
• PVK
• Conductance switching
• Memory
• Flash

Bistable electrical switching and nonvolatile memory devices with the configuration of indium tin oxide (ITO)/active layer/aluminum (Al) are reported. The active layer were prepared from the mixed compositions of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole, (PBD) and poly(N-vinylcarbazole) (PVK). The as-fabricated ITO/PBD:PVK/Al sandwiched devices exhibited rewriteable flash memory property. Due to the strong interaction between oxadiazole acceptor and carbazole donor, the devices demonstrate excellent performance. The memory devices can operate over a small voltage range, the absolute value of switching-on threshold voltage is less than 1 V and the switching-off threshold voltage is less than 3.5 V. The ON/OFF ratio of current switches in the range of 10(4)-10(2) during the variation of applied voltage and the two different resistance states can be maintained over 4 h.

• 出版日期2015-10
• 单位黑龙江大学; 齐齐哈尔大学