A Design of BJT-based ESD Protection Device combining SCR for High Voltage Power Clamps

作者：Jung Jin Woo^*; Koo Yong Seo

来源：Journal of Semiconductor Technology and Science, 2014, 14(3): 339-344.

DOI：10.5573/JSTS.2014.14.3.339

• Electrostatic discharge
• bipolar junction transistor
• silicon controlled rectifier

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) 0.18 mu m. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately 1.6 Omega;. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• 出版日期2014-6