Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

作者：Heller Eric R^*; Vetury Rama; Green Daniel S

来源：IEEE Transactions on Electron Devices, 2011, 58(4): 1091-1095.

DOI：10.1109/TED.2011.2107913

• Device model
• field-effect transistor (FET)
• GaN
• GaN/AlGaN
• high-electron mobility transistor (HEMT)
• model calibration
• model characterization
• modulation-doped field effect transistor (MODFET)

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.

• 出版日期2011-4