The effect of surface reactions of O, O-3 and N on film properties during the growth of silica-like films

作者：Ruegner K^*; Reuter R; von Keudell A; Benedikt J

来源：Journal of Physics D: Applied Physics , 2014, 47(22): 224005.

DOI：10.1088/0022-3727/47/22/224005

• silicondioxide
• FTIR
• atmospheric pressure plasma
• microplasma
• deposition

The effect of surface reactions of O, O-3 and N radicals during the growth of silica-like (SiOxCyHz) films on film properties is investigated. A SiOxCyHz film is deposited from a He/Hexamethyldisiloxan (HMDSO) cold atmospheric plasma on a rotating substrate. The surface of this film is, during the growth, treated on the opposite site of the substrate by a second cold atmospheric plasma with helium and an addition of O-2 or N-2. A reactor with four separated cells and gas curtains between them is used to avoid cross-contamination of the ambient atmosphere in each cell. The changes in film composition after the deposition with and without a treatment by O, O-3 and N are investigated by Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy. Additionally, the effect of each species on the deposition rate is also presented and discussed.

• 出版日期2014-6-4