摘要
Charge coupled devices (CCD) have been tested at widely differing dose rates to examine the radiation tolerance dependence on the dose rates. The test results show a maximum tolerance of CCDs at 10.2 rad(Si)/sec, a slight reduction in tolerance at 34.8 rad(Si)/sec and a quite precipitous roll off when moving down to 1 rad(Si)/sec and 0.1 rad(Si)/sec. The degradation of the dummy output voltages and the dark signal voltages are compared at the dose rates of 0.1, 1.0, 10.2 and 34.8 rad(Si)/sec, respectively. It shows that the degradation levels depend on the dose rates. The CCDs are divided into two groups during Co-60 gamma irradiation. Either the output amplifiers or the photo sensing and the shift register areas are shielded with Pb during the irradiation tests.
- 出版日期2010-6
- 单位西北核技术研究所; 清华大学