A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

作者：Cho Edward Namkyu; Shin Yong Hyeon; Yun Ilgu^*

来源：Journal of Applied Physics, 2014, 116(17): 174507.

DOI：10.1063/1.4901000

A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (Delta V-TH(QM)) and the gate capacitance (C-g) degradation. First of all, Delta V-TH(QM) induced by quantum mechanical (QM) effects is modeled. The C-g degradation is then modeled by introducing the inversion layer centroid. With Delta V-TH(QM) and the C-g degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.

• 出版日期2014-11-7