摘要

A series of n-i-p type amorphous silicon solar cells are prepared by radio-frequency plasma enhanced chemical vapor deposition(RF-PECVD), and ITO films as front contact layer are prepared by reactive thermal deposition technique. A series of p layer with different crystalline volume fraction (Xc) are fabricated by changing B2H6 doping concentration. The influences of p layer on the p/ITO interface as well as n-i-p type solar cell properties are investigated in detail. The results show that the contact property of p/ITO interface and the Voc and FF of solar cells are improved by optimized p layers with proper crystallinity. Finally, the n-i-p type a-Si solar cells with efficiency of 6.57% have been obtained on stainless steel(SS) substrates.

全文