科研之友
微信
新浪微博
Facebook
分享链接
摘要
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic Ga0.92Mn0.08As layer. The results reveal hysteresis-like behaviors of low field magneto resistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
- 出版日期2008-11
