A NEW DIFFERENTIAL STACKED SPIRAL INDUCTOR WITH IMPROVED SELF-RESONANCE FREQUENCY

作者：Kim Joonchul; Nam Byungjae; Kim Hyeongdong^*

来源：Microwave and Optical Technology Letters, 2011, 53(5): 1024-1026.

DOI：10.1002/mop.25900

• CMOS inductor
• differential stacked spiral inductor
• parasitic capacitance
• self-resonance frequency

A new silicon-based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18-mu m complimentary metal-oxide semiconductor technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency, f(sr), and quality factor, Q, of the new DSSI were compared with a conventional DSSI. The f(sr) of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced.

• 出版日期2011-5