A high-speed lateral PIN polysilicon photodiode on standard bulk CMOS process

作者：Zou, Wanghui; Xia, Yu; Chen, Diping; Zeng, Yun^*

来源：Solid-State Electronics, 2017, 129: 61-65.

DOI：10.1016/j.sse.2016.12.005

• Polysilicon photodiode
• High-speed optical interconnection
• Optoelectronic integrated circuits (OEIC)
• Responsivity
• Bandwidth
• Standard bulk complementary metal-oxide-semiconductor (CMOS)

This paper reports a lateral PIN polysilicon photodiode on standard bulk complementary metal-oxidesemiconductor (CMOS) process for monolithically integrated high-speed optoelectronic integrated circuits (OEIC). A nominal undoped polysilicon as the photodetection area is intentionally created without introducing any process modification. With the device area of 50 x 50 mu m(2), a measured responsivity of 46 mA/W and a quantum efficiency of 11% were observed under the reverse voltage of 10 V and the wavelength of 520 nm. A compact equivalent circuit model for the proposed lateral photodiode is built to analyze the frequency response, and a bandwidth of over 20 GHz was obtained from the measured data, which is to the best of our knowledge the largest bandwidth ever reported based on standard bulk CMOS process.

• 出版日期2017-3
• 单位湖南大学