Analytic drain current model for III-V cylindrical nanowire transistors

作者：Marin E G^*; Ruiz F G; Schmidt V; Godoy A; Riel H; Gamiz F

来源：Journal of Applied Physics, 2015, 118(4): 044502.

DOI：10.1063/1.4927041

An analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schrodinger equations for the C-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order -1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40 nm, gate overdrive biases up to 0.7 V, and densities of interface states up to 10(13)eV(-1)cm(-2).

• 出版日期2015-7-28