Accurate Description of Temperature Accelerated NBTI Effect Using the Universal Prediction Model

作者：Sun Fu^*; Ma Chenyue; Lin Xinnan

来源：IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015-06-01 to 2015-06-04.

• temperature
• NBTI model
• hole trapping
• interface-state

In this work, the temperature accelerated NETT effect is modeled by a universal model. The investigation of the threshold voltage shift over a wide temperature range reveals distinct degradation mechanisms under low and high temperatures, which is supposed due to the influence of temperature to the Si-H bond activation energy and H-2 diffusivity. The active energy of the interface-state generation and the hole-trapping/detrapping time constant are found as monotonic functions of temperature. Universality of the proposed NBTI temperature model is also verified using SiON gale dielectric p-MOSFET with different nitrogen densities. The NET! recovery characteristics under conditions of constant and variable temperature are accurate described.

• 出版日期2015
• 单位香港科技大学; 北京大学深圳研究生院