A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

作者:Jazayeri Farzan*; Sammak Ahmad; Forouzandeh Behjat; Raissi Farshid
来源:IEICE Electronics Express, 2010, 7(13): 906-912.
DOI:10.1587/elex.7.906

摘要

A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter which is designed with nanoscale FED are 57.9% and 18.21% less than these factors in a comparable CMOS sub-threshold inverter. So the nanoscale FED scheme can provide better power efficiency than standard subthreshold CMOS inverters.

  • 出版日期2010-7-10