摘要

In the study of bulk heterojunction (BHJ) solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM), P3HT/PCBM device performance is strongly depending on the thickness of active region, materials in use and fabrication methods. In such devices, optoelectronic behaviors such as charge carrier generation and recombination, photocurrent generation and charge transport mechanism are different in devices of different fabrication methods. An electrical model accounting for study of the performance of P3HT:PCBM organic bulk heterojunction solar cells is developed to achieve the device parameter for high performance of the polymer-fullerene bulk heterojunction solar cells. In this model, by solving the drift-diffusion equations by considering the boundary condition and uniform potential energy, the effects of the active region thickness, potential energy and photocurrent generation on the performance of P3HT:PCBM bulk heterojunction solar cell have been studied. Simulated current-voltage characteristics as a function of active layer thickness reveal relatively good agreement between the model's predictions and published modeling and experimental reports.

  • 出版日期2015