AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

作者：Tyagi Anurag^*; Farrell Robert M; Kelchner Kathryn M; Huang Chia Yen; Hsu Po Shan; Haeger Daniel A; Hardy Matthew T; Holder Casey; Fujito Kenji; Cohen Daniel A; Ohta Hiroaki; Speck James S; DenBaars Steven P; Nakamura Shuji

来源：Applied Physics Express, 2010, 3(1): 011002.

DOI：10.1143/APEX.3.011002

We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-cladding-free epitaxial structure, grown on semipolar (20 (2) over bar1) GaN substrates. The devices employed In(0.06)Ga(0.94)N waveguiding layers to provide transverse optical mode confinement. A maximum lasing wavelength of 506.4nm was observed under pulsed operation, which is the longest reported for AlGaN-cladding-free III-nitride LDs. The threshold current density (J(th)) for index-guided LDs with uncoated etched facets was 23 kA/cm(2), and 19 kA/cm(2) after application of high-reflectivity (HR) coatings. A characteristic temperature (T(0)) value of similar to 130 K and wavelength red-shift of similar to 0.05 nm/K were confirmed.

• 出版日期2010