Application of high uniaxial strain methods for semiconductor parameter determination

作者：Kolomoets V^*; Ermakov V; Panasyuk L; Fedosov S; Orasgulyev B; Nazarchuk P

来源：Physica B: Condensed Matter , 2013, 417: 46-48.

DOI：10.1016/j.physb.2013.02.017

• Tensoresistivity effects
• Effective mass
• Uniaxial strain

We considered the use of strong uniaxial deformation of crystals n-Si, p-Si n-Ge p-Ge for the determination of fundamental parameters of the semiconductors and the parameters defining the transport phenomena in these crystals. It is known that the method of weak uniaxial strain, which characterizes the piezoresistance of semiconductors, has a fairly significant limitations in terms of its wide spread use for determining the mechanisms of the effect, as well as to determine the parameters of these crystals.

• 出版日期2013-5-15