A simultaneous annealing effect during high-temperature electroless copper plating using the non-isothermal deposition method

作者：Chou Yu Hhien; Liu Yih Ming; Sung Yuh; Wang Chung An; Ger Ming Der^*

来源：Materials Letters, 2008, 62(29): 4461-4463.

DOI：10.1016/j.matlet.2008.08.004

• Non-isothermal deposition
• Copper film
• Annealing
• Ultra-large-scale-integration

A simultaneous annealing effect on the electroless-plated copper films deposited using the non-isothermal deposition (NITD) method was demonstrated. The Cu films were deposited onto NiMoP/Si substrates and their properties, such as microstructure, resistivity, and crystalline texture, were studied. At a deposition temperature of 400 degrees C, we found that the resistivity of the as-deposited Cu films was as low as 2.4 mu Omega.cm, and X-ray diffraction showed a remarkable (111)/(200) peak ratio of 18.7. It reveals that the NITD system has an excellent capability to deposit and anneal a metal film in one step and does not require any post-annealing process.

• 出版日期2008-11-30
• 单位中国人民解放军国防大学