A new alternative to secondary CsM+ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry

作者：Drozdov M N^*; Drozdov Yu N; Polkovnikov V N; Starikov S D; Yunin P A

来源：Technical Physics Letters, 2013, 39(1): 46-50.

DOI：10.1134/S1063785013010070

A comparison of the results of depth profiling of multilayer metal structures by secondary ion mass spectrometry with the use of various types of the registered secondary ions has been conducted. For the first time, it has been demonstrated that, to increase depth resolution, two variants can be used in addition to the known secondary ions CsM+ (M = La, Pd, Mo): M+ at sputtering by cesium ions and OM- at sputtering by oxygen ions. For the Mo/Si multilayer structures, the use of the elementary secondary ions Mo+ and Si+ at sputtering by Cs ions and probing by the cluster ions provides the best depth resolution.

• 出版日期2013-1