Morphology and optical properties of GaAs layers grown on (111)A GaAs substrates in N-2 ambient by metalorganic chemical vapor deposition

作者：Zhang BL^*; Tang XH; Huang GS; Mei T; Zhu JY; Li H

来源：Journal of Materials Science: Materials in Electronics , 2004, 15(5): 283-286.

DOI：10.1023/B:JMSE.0000024227.74645.42

Using tertiary-butyl arsine as a group V precursor, GaAs epitaxial layers have been grown on both (1 1 1)A- and (1 0 0)-oriented GaAs substrates in N-2 ambient using the atmospheric metalorganic chemical deposition technique. The surface morphology and optical properties of the GaAs homoepitaxial layers were studied in detail. It is found that both the surface morphologies and optical properties of GaAs layers on (1 1 1)A GaAs substrates depend much more strongly on the combination of growth temperature and Will input molar ratio, compared to the epitaxial layers on (10 0) plane GaAs. The photoluminescence (PL) emission efficiency increases with increasing growth temperature in the region 550-650degreesC for both (1 1 1)A and (100) GaAs epitaxial layers. At room temperature, the PL emission intensity of the (1 1 1)A GaAs epilayer grown under optimum growth conditions is 67 times as strong as that of the same run-grown (100) GaAs epilayer.

• 出版日期2004-5
• 单位南阳理工学院