Atomic layer deposition of Cu(I) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

作者：Avila J R; Peters A W; Li Zhanyong; Ortuno M A; Martinson A B F; Cramer C J; Hupp J T^*; Farha O K

来源：Dalton Transactions, 2017, 46(18): 5790-5795.

DOI：10.1039/c6dt02572b

To grow films of Cu2O, bis-(dimethylamino-2-propoxide) Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 degrees C, a growth rate of 0.12 +/- 0.02 (A) over circle per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(I).

• 出版日期2017-5-14
• 单位西北大学