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摘要
AlGaN/GaN films were grown on carbonized Si(111) substrates, which were employed to prevent impurities such as residual Ga atoms from reacting and deteriorating the surface of Si substrates. The cleaning process for the flow channel in metal organic chemical vapor deposition (MOCVD) could effectively be eliminated by using this carbonized Si substrate, and high-quality AlGaN/GaN films were obtained.
- 出版日期2014-4
