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摘要
An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D (omega tau(i)) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D (omega tau(i)) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D (omega tau(i)) is helpful in further improving the modeling accuracy degree.
