A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

作者：Djezzar Boualem^*; Tahi Hakim; Benabdelmoumene Abdelmadjid; Chenouf Amel; Kribes Youcef

来源：Japanese Journal of Applied Physics, 2012, 51(11): 116602.

DOI：10.1143/JJAP.51.116602

In this paper, we present a new method, named on the fly oxide trap (OTFOT), to extract the bias temperature instability (BTI) in MOS transistors. The OTFOT method is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its viability to characterize the negative BTI (NBTI). Using alternatively high and low frequencies, OTFOT method separates the interface-traps (Delta N-it) and border-trap (Delta N-bt) (switching oxide-trap) densities independently and also their contributions to the threshold voltage shift (Delta V-th), without needing additional methods. The experimental results, from two experimental scenarios, showing the extraction of NBTI-induced shifts caused by interface- and oxide-trap increases are also presented. In the first scenario, all stresses are performed on the same transistor. It exhibits an artifact value of exponent n. In the second scenario, each voltage stress is applied only on one transistor. Its results show an average n of 0.16, 0.05, and 0.11 for NBTI-induced Delta N-it, Delta N-bt, Delta V-th, respectively. Therefore, OTFOT method can contribute to further understand the behavior of the NBTI degradation, especially through the threshold voltage shift components such as Delta V-it and Delta V-ot caused by interface-trap and border-trap, respectively.

• 出版日期2012-11