ACTIVE CURRENT MODELING FOR GAN HEMT DEVICES

作者：Lim Hong Y^*; Ng Geok I; Leong Yoke C

来源：Microwave and Optical Technology Letters, 2015, 57(3): 694-697.

DOI：10.1002/mop.28929

• empirical modeling
• active current
• GaN high electron mobility transistor

Modeling equations derived from the modified Chalmer's model to improve the active current modeling capability for GaN high electron mobility transistor (HEMT) has been demonstrated. The modifications addresses issues of modeling active current for GaN HEMT such as the limitations of existing current models to effectively model the output conductance across the measured V-GS range and the divergent of simulated transconductance values when high biasing voltages are applied. Comparison between simulated and experimental data illustrated the validity of the proposed equations. The parameters extraction process is straightforward and can easily be related to the modeling equations.

• 出版日期2015-3
• 单位南阳理工学院