Advanced CMOS-MEMS Resonator Platform

作者：Li Cheng Syun^*; Hou Li Jen; Li Sheng Shian

来源：IEEE Electron Device Letters, 2012, 33(2): 272-274.

DOI：10.1109/LED.2011.2175695

• CMOS-MEMS
• composite structure
• deep submicrometer gap
• monolithic integration
• resonators
• thermal stability

Deep-submicrometer-gap CMOS-MEMS "composite" resonators fabricated using 0.18-mu m-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 k Omega at 15.3 MHz. A simple maskless wet release process has been successfully transferred from a 0.35-mu m platform to an advanced 0.18-mu m version, capable of offering enhanced gap spacing and transduction area for CMOS-MEMS resonators monolithically integrated with high-performance CMOS circuitry. This proposed platform offers ease of use, fast turnaround time, low cost, convenient prototyping, and inherent MEMS-circuit integration, therefore showing great potential toward future integrated sensing and single-chip RF applications.

• 出版日期2012-2
• 单位清华大学