Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films

作者：Yasuno Satoshi^*; Kita Takashi; Morita Shinya; Hino Aya; Hayashi Kazushi; Kugimiya Toshihiro; Sumie Shingo

来源：IEICE - Transactions on Electronics, 2012, E95C(11): 1724-1729.

DOI：10.1587/transele.E95.C.1724

• microwave photoconductivity decay
• a-IGZO
• oxide semiconductor
• photoconductivity response

Microwave photoconductivity decay (mu-PCD) method was applied to evaluate the effects of chemical composition and Ar+ plasma induced damage on the bulk and the surface states in amorphous In-Ga-Zn-O (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor performances. In addition, the peak reflectivity signals obtained after various Ar+ plasma treatment duration were well correlated with the transistor characteristics. With Ar+ plasma treatment, the peak reflectivity signal decreased in accordance with degradation of transistor characteristics. The mu-PCD method was found to be a very useful tool not only to evaluate the bulk and the surface states, but also to predict the performance of a-IGZO transistors subjected to various plasma processes in the production.

• 出版日期2012-11