科研之友
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摘要
We report Al0.8Ga0.2As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at lambda = 405 nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to similar to 10(-6)/gate with a similar to 5 ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K.
- 出版日期2015-11
