A non-volatile four-state magnetic memory in a Co/(011)Pb(Mg1/3Nb2/3)O-3-PbTiO3 heterostructure

作者：Jiang, Changjun^*; Wang, Fenglong; Dong, Chunhui; Zhou, Cai; Wu, Lei; Xue, Desheng

来源：Applied Physics Letters, 2016, 108(3): 032401.

DOI：10.1063/1.4940117

• Domain switchings
• In-plane magnetization
• In-plane strains
• Magnetic memory
• Remanent magnetization
• Remnant magnetization
• Switching effect
• Temperature dependence

A non-volatile four-state magnetic memory is achieved in a Co/(011)Pb(Mg1/3Nb2/3)O-3-PbTiO3 heterostructure. The in-plane magnetization of ferromagnetic Co film in the heterostructure can be controlled both electrically and magnetically. Electric field mediated magnetism is caused by piezostrain effect, which displays a stable non-volatile remnant magnetization vs electric field looplike behavior. In-plane strain-electric field (S-E) behavior under different temperatures reveals a nonvolatile strain switching effect, which is responsible for the non-volatile remnant magnetization switching through piezostrain mediated magnetoelectric effect. Further investigations on temperature dependence of S-E behavior suggest that the absent of the second non-180 degrees domain switching may be responsible for the asymmetry in strain curves that causes the non-volatile strain switching, and therefore causes the non-volatile remanent magnetization switching, which is crucial for the four-state magnetoelectric memory.

• 出版日期2016-1-18
• 单位兰州大学