科研之友
微信
新浪微博
Facebook
分享链接
摘要
The paper presents synthesis, sintering procedure, microstructure and dielectric properties of a new high permittivity perovskite material relative to Cu2Ta4O12, with the composition Bi2/3CuTa4O12. Impedance spectroscopic studies carried out at frequencies 10Hz-2MHz and in a temperature range -55 to 740 degrees C revealed two dielectric responses. The high-frequency and low-temperature response was attributed to grains, and the low-frequency and high-temperature one - to grain boundaries. The high dielectric permittivity was suggested to be related to spontaneous formation of internal barrier layers at the grain boundaries of the semiconducting grains.
- 出版日期2013-1-1
