Nitride-based hetero-field-effect-transistor-type photosensors with extremely high photosensitivity

作者：Ishiguro Mami; Ikeda Kazuya; Mizuno Masataka; Iwaya Motoaki^*; Takeuchi Tetsuya; Kamiyama Satoshi; Akasaki Isamu

来源：Physica Status Solidi-Rapid Research Letters, 2013, 7(3): 215-217.

DOI：10.1002/pssr.201206483

• GaInN
• photosensors
• HFET
• field-effect transistors
• two-dimensional electron gases

AlGaN/GaN hetero-field-effect-transistor-type (HFET-type) photosensors are fabricated with a p-GaInN optical gate for the detection of visible light. These photosensors employ a two-dimensional electron gas at the heterointerface between AlGaN and GaN as a highly conductive channel with a high electron mobility. By changing the InN molar fraction in the p-GaInN optical gate, the wavelength range of the photosensitivity of the HFET-type photosensors can be controlled. The photosensitivity of the AlGaN/GaN HFET-type photosensors with a p-GaInN optical gate greatly surpassed those of commercially available Si pin and Si avalanche photodiodes, and was comparable to those of photomultiplier tubes.

• 出版日期2013-3