Design and Analysis of a Wideband Gilbert Cell VGA in 0.25-mu m InP DHBT Technology With DC-40-GHz Frequency Response

作者：Gavell Marcus^*; Gunnarsson Sten E; Angelov Iltcho; He Zhongxia Simon; Ferndahl Mattias; Zirath Herbert

来源：IEEE Transactions on Microwave Theory and Techniques, 2017, 65(10): 3962-3974.

DOI：10.1109/TMTT.2017.2693146

• Double heterojunction bipolar transistor (DHBT)
• gain bandwidth product (GBP)
• Gb/s
• InP
• radio frequency integrated circuit (RFIC)
• variable gain amplifier (VGA)

A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25-mu m InP double heterojunction bipolar transistor technology with f(T)/f(max) of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single -7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 mm(2). We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.

• 出版日期2017-10