A 24-28 GHz high-stability CMOS power amplifier using common-gate-shorting (CGS) technique with 17.5dBm Psat and 16.3% PAE for 5G millimeter-wave applications

作者：Jiang, Chunshen; Zhang, Runxi^*; Shi, Chunqi

来源：Analog Integrated Circuits and Signal Processing, 2019, 98(1): 193-200.

DOI：10.1007/s10470-018-1350-y

• Millimeter-wave
• Power amplifier
• CMOS
• Balun
• High-stability
• Common-gate-shorting
• Interdigited structure

This paper presents a 24-28 GHz high-stability millimeter-wave power amplifier (PA) implemented in low-cost 0.13 mu m CMOS process. The PA consists of two cascode stages with passive transformer-based input and output baluns. The common-gate-shorting technique is proposed for high-stability and high-gain millimeter-wave cascode stage. To realize this technique, an interdigited powercell structure is adopted for MOS layout optimization. In order to improve Pout and PAE, an inter-stage inductor is introduced. The proposed PA achieves a PAE over 16.3% with a saturated output power of 17.5dBm. The maximum gain is 21.2dB at 26GHz.

• 出版日期2019-1
• 单位华东师范大学