Fabrication Characteristics of Al2O3 pH-Ion Sensitive Field Effect Transistor Fabricated Using Atomic Layer Deposition and Sputter

作者：Lee Sang Kwon; Sohn Young Soo; Choi Sie Young^*

来源：Sensor Letters, 2011, 9(1): 3-6.

DOI：10.1166/sl.2011.1407

• ISFET
• Al2O3
• Atomic Layer Deposition

The characteristics of the pH-ion sensitive field effect transistors (ISFET) with the Al2O3 as a gate sensing membrane (Al2O3-ISFET) deposited by atomic layer deposition (ALD) were investigated and compared with those of the pH-ISFET with the Al2O3 deposited by the sputter. The pH-ISFET was fabricated by CMOS compatible process techniques. Sensitivity, hysteresis and long term stability of the fabricated pH-ISFETs with the Al2O3 gate deposited by both ALD and sputter were observed. The surface roughness of the Al2O3 films was investigated by atomic force microscopy to ensure density of the sensing membranes. The performance of the pH-ISFET with the Al2O3 deposited by the ALD was better than that of pH-ISFET with the Al2O3 deposited by the sputter.

• 出版日期2011-2