科研之友
微信
新浪微博
Facebook
分享链接
摘要
Common problems with resistive Oxide-based Resistive Random Access Memory (so-called OxRRAM) are related to high variability in operating conditions and low yield. Although research has taken steps to resolve these issues, variability remains an important characteristic for OxRRAMs. In this paper, a test structure consisting of non-addressable OxRRAM cells with parallel connection of all memory elements is introduced. The test structure provides useful information regarding OxRRAM variability. The test structure can be used as a powerful tool for process variability monitoring during a new process technology introduction but also for marginal cell populations detection during process maturity.
- 出版日期2013-11
