A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

作者：Miyaji Kousuke^*; Node Shinji; Hatanaka Teruyoshi; Takahashi Mitsue; Sakai Shigeki; Takeuchi Ken

来源：Solid-State Electronics, 2011, 58(1): 34-41.

DOI：10.1016/j.sse.2010.11.028

• Ferroelectric
• NAND flash memory
• Program disturb
• Self-boost
• Low power
• High performance solid-state drive

A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0 V power supply operation in Ferroelectric (Fe-) NAND flash memories. The proposed SCSB scheme only self-boosts the channel voltage of the cell to which the program voltage V(PGM) is applied in the program-inhibit NAND string. The program disturb is well suppressed at the 1.0 V power supply voltage in the proposed program scheme. The power consumption of the Fe-NAND at V(cc) = 1.0 V decreases by 86% compared with the conventional floating gate (FG-) NAND at V(cc) = 1.8 V without the degradation of the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.7 times and the 9.3 GB/s write throughput of the Fe-NAND SSD is achieved for an enterprise application.

• 出版日期2011-4