摘要

The influence of formula on the dielectric properties and sintering temperature of (Ba,Sr)TiO3 (BST) based high voltage multilayer ceramic capacitor has been investigated by means of orthogonaldesign experiments. The major and secondary influencing factors and the tendency of different factorial levels for the dielectric properties of BST ceramics have been obtained. The ceramic microstructure is analyzed by SEM. The influencing mechanism of various components on the dielectric properties of BST ceramics is studied. Based on(Ba, Sr, Cd)Ti03 to replace (Ba, Sr)Ti03, the BST ceramic with fine grain( [similar to] 1 um) having optimum comprehensive properties has been obtained, which was sintered as low as 1230°C. The right CdO has improved the shape of crystal grain in ceramic, preventing the crystal grain from growing up; excessive Nb2O2 with partly separating in crystal boundary has prevented crystal boundary' moving, restraining the growth of crystal grain, accordingly forming thin crystalline structure. The preparation of high voltage MLCC sintered at medium temperature has been provided on the basis of the experiments above.

  • 出版日期2005

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