Comparison of electrical performances of two n-in-p detectors with different implant type of guard ring by TCAD simulation

作者：Mekheldi Mohammed; Oussalah Slimane^*; Lounis Abdenour; Brihi Nourredine

来源：Results in Physics, 2016, 6: 80-81.

DOI：10.1016/j.rinp.2016.01.016

• Breakdown voltage
• Guard ring
• n-in-p silicon detector
• TCAD simulation

This paper presents a preliminary comparative study for two different guard rings structures in the purpose of evaluating their electrical performances. The two structures are based on the n-in-p technology with different implant type of guard rings. I-V characteristics have been simulated using Silvaco/ATLAS software for both structures and compared for various parameters of substrate, guard ring and oxide. Simulation results show that the shape of leakage current is almost the same in all simulations but in terms of breakdown voltage, n-in-p structure with n-type guard rings ensures high voltage stability.

• 出版日期2016