A 38% Tuning Bandwidth Low Phase Noise Differential Voltage Controlled Oscillator Using a 0.5 mu m E/D-PHEMT Process

作者：Chang Hong Yeh^*; Wu Yi Shuo; Wang Yu Chi

来源：IEEE Microwave and Wireless Components Letters, 2009, 19(7): 467-469.

DOI：10.1109/LMWC.2009.2022136

• Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT)
• low phase noise
• voltage controlled oscillator (VCO)

This paper presents a 38% tuning bandwidth low phase noise differential voltage controlled oscillator (VCO) using a 0.5 mu m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed VCO is based on a differential topology with two common-gate transistors. To achieve a wide tuning range with low phase noise, varactor in the VCO core employs the E-mode PHEMT device. The frequency of the VCO is from 18.8 to 27.5 GHz with a tuning bandwidth of 38% and an output power of higher than 5 dBm. The VCO demonstrates a phase noise of -109 dBc/Hz at 1 MHz offset frequency. This circuit can be compared with the VCOs fabricated using the advanced InP HBT technologies.

• 出版日期2009-7
• 单位中央民族大学