Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide composites

作者：Li Jiantao; Tang Aiwei^*; Li Xu; Cao Yapeng; Wang Miao; Ning Yu; Lv Longfeng; Lu Qipeng; Lu Yunzhang; Hu Yufeng; Hou Yanbing; Teng Feng

来源：Nanoscale Research Letters, 2014, 9(1): 128.

DOI：10.1186/1556-276X-9-128

• Bistable device
• Ag2S nanocrystals
• PVK
• NDR effects
• Charge trapping

An electrically bistable device has been fabricated based on poly(N-vinylcarbazole) (PVK)-silver sulfide (Ag2S) composite films using a simple spin-coating method. Current-voltage (I-V) characteristics of the as-fabricated devices exhibit a typical electrical bistability and negative differential resistance (NDR) effect. The NDR effect can be tuned by varying the positive charging voltage and the charging time. The maximum current ratio between the high-conducting state (ON state) and low-conducting state (OFF state) can reach up to 10(4). The carrier transport mechanisms in the OFF and ON states are described by using different models on the basis of the experimental result.

• 出版日期2014-3-19
• 单位北京交通大学